Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

• . Keywords: angle dependency; argon; contamination; energy dependency; ion bombardment; low energy; molecular dynamics; silicon; simulations; water; Introduction Low-energy ion beams offer substantial improvements and possibilities to reduce the damage production on the surface of samples [1][2]. In recent

Impact of electron–phonon coupling on electron transport through T-shaped arrangements of quantum dots in the Kondo regime

• Patryk Florków and
• Stanisław Lipiński

Beilstein J. Nanotechnol. 2021, 12, 1209–1225, doi:10.3762/bjnano.12.89

• demonstrated by the energy dependency of the states corresponding to n = 0, 1, 2 plotted as function of Ef in the inset of Figure 4b. This is also reflected in the broadening of the resonance line on the open dot as shown in Figure 4c. The presented transmissions correspond to charge Fano–Kondo state, mixed

Amplified cross-linking efficiency of self-assembled monolayers through targeted dissociative electron attachment for the production of carbon nanomembranes

• Sascha Koch,
• Christopher D. Kaiser,
• Paul Penner,
• Michael Barclay,
• Lena Frommeyer,
• Daniel Emmrich,
• Patrick Stohmann,
• Tarek Abu-Husein,
• Andreas Terfort,
• D. Howard Fairbrother,
• Oddur Ingólfsson and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2017, 8, 2562–2571, doi:10.3762/bjnano.8.256

• thus bound to relax through re-emission of the electron (autodetachment) or through dissociation. The cross section for the formation of the TNI at very low incident energies follows an E−1/2 energy dependency and can be substantial at or close to 0 eV [28][29]. Dissociative ionization, on the other

Surface excitations in the modelling of electron transport for electron-beam-induced deposition experiments

• Francesc Salvat-Pujol,
• Roser Valentí and
• Wolfgang S. Werner

Beilstein J. Nanotechnol. 2015, 6, 1260–1267, doi:10.3762/bjnano.6.129

• than half of it [44]. The probability for an electron that crosses a surface to undergo a surface excitation is, to a first approximation [45], proportional to the surface dwell time , where is the projectile energy and θ is the surface crossing angle with respect to the surface normal. The energy

• dependency implies that, in practice, surface excitations are relevant for electron energies up to a few kiloeelectronvolts. Additional structure to the aforementioned angular behavior is predicted for scattering geometries coinciding with deep minima of the differential elastic scattering cross section